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APTC60DHM45T1G
Asymmetrical bridge Super Junction MOSFET Power Module
VDSS = 600V RDSon = 45m max @ Tj = 25C ID = 49A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * * * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged
Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 49 38 130 20 45 250 15 3 1900 Unit V A V m W A mJ
August, 2009 1-7 APTC60DHM45T1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC60DHM45T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
40 3
Max 250 500 45 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 49A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 49A RG = 5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Min Typ 7.2 8.5 150 34 51 21 30 100 45 675 520 1100 635 J ns nC Max Unit nF
J
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A Tj = 125C Tj = 25C IF = 30A VR = 400V di/dt =200A/s Tj = 125C Tj = 25C Tj = 125C
Min 600
Typ
Max 25 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
30 1.8 2.2 1.5 25 160 35 480 2.2
V
August, 2009 2-7 APTC60DHM45T1G - Rev 0
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTC60DHM45T1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.2 150 125 100 4.7 80 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-7
APTC60DHM45T1G - Rev 0
August, 2009
APTC60DHM45T1G
Typical CoolMOS Performance Curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 320 ID, Drain Current (A) 280 240 200 160 120 80 40 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 ID, DC Drain Current (A) 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 140 ID, Drain Current (A)
VGS=20V Normalized to VGS=10V @ 50A VGS=10V 5V 4.5V 4V VGS=15&10V
Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7
TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
6.5V 6V 5.5V
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 50 40 30 20 10 0
August, 2009 4-7 APTC60DHM45T1G - Rev 0
25
50 75 100 125 TC, Case Temperature (C)
150
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APTC60DHM45T1G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Coss C, Capacitance (pF) 10000 Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 50A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C
1 ms 10 ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 20 40
August, 2009 5-7 APTC60DHM45T1G - Rev 0
VDS=480V
ID=50A TJ=25C
VDS=120V VDS=300V
1000 Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
60 80 100 120 140 160 Gate Charge (nC)
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APTC60DHM45T1G
140 120
td(on) and td(off) (ns) Delay Times vs Current 70
td(off) VDS=400V RG=5 TJ=125C L=100H td(on)
Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr
VDS=400V RG=5 TJ=125C L=100H
100 80 60 40 20 0 0 10 20 30 40 50
tf
60 70 80
0
10
20
30
40
50
60
70
80
ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 Eoff 0.8 0.4 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=400V RG=5 TJ=125C L=100H
ID, Drain Current (A) Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
VDS=400V ID=50A TJ=125C L=100H
Eon
Eoff Eon
Operating Frequency vs Drain Current
ZVS VDS=400V D=50% RG=5 TJ=125C TC=75C
250 Frequency (kHz)
ZCS
IDR, Reverse Drain Current (A)
300
200 150 100 50 0 5
hard switching
100
TJ=150C
10
TJ=25C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
August, 2009 6-7 APTC60DHM45T1G - Rev 0
10 15 20 25 30 35 40 45 50 ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
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APTC60DHM45T1G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 120 IF, Forward Current (A) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=400V TJ=25C TJ=125C
175
trr, Reverse Recovery Time (ns)
Trr vs. Current Rate of Charge
TJ=125C VR=400V
150 125 100 75 50 0 200 400 600 800
60 A 30 A 15 A
1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge
TJ=125C VR=400V 60 A 15 A 30 A
QRR, Reverse Recovery Charge (C)
60 A
IRRM, Reverse Recovery Current (A)
1.5
30 25 20 15 10 5 0 0
1.0
30 A 15 A
0.5
0.0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
200
400
600
800
1000 1200
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 200 175 C, Capacitance (pF) 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (C)
Duty Cycle = 0.5 TJ=175C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APTC60DHM45T1G - Rev 0
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG".
August, 2009

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